抄録
Carbon nitride films were deposited by reactive sputtering process and by pulsed laser ablation process with substrate bias. The atomic composition ratio of N/C and sp3 bonding ratio increased with substrate bias voltage up to 100 V. The maximum atomic composition ratio of N/C was 0.35 for reactive sputtering and 0.24 for laser ablation. However, the hardness of the films is high for reactive sputtering, and low for pulsed laser ablation. From the FE-SEM and TEM observation, the morphology of the films had dense structure by reactive sputtering and nano-size columnar structure with uneven surface by pulsed laser ablation.
