抄録
GeC:H films have been deposited by a reactive rf magnetron sputtering of Ge target in argon-methane and helium gas mixtures. The effect of helium partial pressure ratio R on the structural, optical and electrical properties of the films was investigated. The films shows the amorphous nature in the low R range up to 60%. With increasing R above 70%, the peak of X-ray diffraction appears, the bonding configuration concerning carbon bonds in IR spectra increases, the optical bandgap decreases, and the dark conductivity increases rapidly. It is found from these data that the microcrystallization of GeC:H films could be achieved by introducing hellium in the sputtering process.
