抄録
We investigated the effect of annealing on slightly oxidized silicon surfaces by using atomic force microscopy (AFM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). The very thin oxide films (∼1 nm) were made by chemical treatment for three kinds of samples. One of them was p-type Si(100) wafer, the others were heavily phosphorus-doped Si(100) wafers made by ion implantation and low pressure chemical vapor deposition. These samples were annealed at low temperature (700°C∼900°C) in ultra high vacuum. AFM measurements showed that RMS roughness of all surfaces after annealing in UHV was several times as much as that of the surfaces right after chemical treatment. The morphology of every sample after oxide silicon desorbed by annealing revealed dot shape. And the morphology of p-type Si(100) after annealing at 730°C resembled that of heavily phosphorus-doped Si(100) made by ion implantation after annealing at 830°C. AES and XPS measurements showed that the difference of annealing temperature for these samples was due to the difference of their oxide thickness and the quality of their oxides.
