抄録
Silicon oxidation process using UV-light excited ozone, i.e., ca. 100% ozone atmosphere irradiated by KrF excimer laser light (λ=248 nm), is one of the most promising techniques to fabricate a high-quality SiO2 film at low temperatures. To clarify the mechanism of the silicon oxidation and to optimize the conditions of oxidation, we have done a time-resolved measurement of ozone density. The result shows that there are three stages of ozone density change. The calculated ozone density based on a reaction model fits the observed density at the first stage.
