抄録
The effect of H2 plasma irradiation on a Cl-doped CdTe(111)B crystal was studied by comparing with that of the same irradiation but combined with a post-irradiation thermal annealing in a Cd ambient. Photoluminescence (PL) property of the CdTe crystal was found to be degraded by a two-months storage in a low-pressure desiccator. Electron spectroscopy for chemical analysis revealed that native oxide such as TeO2 was formed on the CdTe surface after the storage. Irradiation by H2 plasma was effective to remove the oxide completely. However, the PL property after the H2 plasma irradiation did not recover the original one due to the formation of Cd vacancy by ion bombardment. The post-irradiation annealing was found to be effective to recover the damage by ion bombardment.
