49 巻 (2006) 3 号 p. 171-173
The mode transition of the DC reactive sputter deposition process has been studied for the fabrication and the stoichiometry control of SiOX films. At a fixed Ar flow rate of 20 sccm and a pressure of 1 Pa (hence the pumping speed was also fixed), oxygen flow rate was modified and the transition between the metal and oxide modes was monitored by the cathode voltage. With a constant current operation of a DC power source, well known steep and hysteretic mode transition appeared. On the other hand, gentler transition with no hysteretic character was observed in a constant power operation. In the latter case, the dependence of the deposited film composition on the oxygen gas flow rate was examined by X-ray photoelectron spectroscopy. The increase in the film composition x from 0.5 to 2.0 was observed in a smaller flow rate region compared to the process mode transition. It can be attributed to the non-uniform deposition of Si atoms which work as oxygen absorber.