有機金属イオンビーム法によるヘテロエピタキシャルSiC ナノドットの結晶成長

抄録

  Silicon carbide (SiC) is a remarkable material for electronic and optoelectronic device applications. Using the organometallic ion beam deposition, the heteroepitaxial SiC nano-dots were fabricated on Si(100) substrate at the low-temperatures (500-800°C). The formation of the SiC nano-dots was performed by the low-energy ion beam deposition system. The single precursor of methylsilicenium ion (SiCH₃⁺) was generated from dimethylsilane (SiH₂(CH₃)₂) plasma. The ion beam was extracted at 25 keV, and mass-selected by a sector magnet. The SiCH₃⁺ ions were decelerated to 100 eV in front of Si(100) substrate. The SiC nano-dots formed on Si(100) were heteroepitaxial 3C-SiC(100). The size of the SiC nano-dots was the length of 100-200 nm and the height of 10-30 nm. The SiC nano-dots formed by the organometallic ion beam deposition showed the nano-tile structure.