抄録
Antimony trisulfide was evaporated in Ar gas at low pressure, and the effects of deposition conditions on the physical properties of evaporated films were studied. The deposition parameters such as Ar pressure, evaporation rate, evaporation source temperature, and the distance between a substrate and an evaporation source temperature, exercised a great effect on the properties of evaporated films.
The effects of deposition parameters revealed in this experiment were very different from those observed in the vacuum deposition of antimony trisulfide. This shows the deposition mechanisms in Ar at low pressure are different from the ordinary vacuum deposition mechanisms.
In this paper, those mechanisms are briefly discussed and qualitative explanations are given.
