抄録
Structural and electrical measurements have been carried out on GaAs films deposited by three temperature method for substrate temperatures between 100° and 550°C. The films deposited below 230 °C exhibited low resistivity and above 450°C high resistivity (106Ω·cm). Half width and most probable energy of energy distribution of secondary electrons from these films were also measured. The films deposited below 230 °C exhibited large values of the half width (3.8 eV) and the most probable energy (1.5 eV), and above 450°C small values (2.5 eV and 1.0 eV), respectively. From these results it may be considered that the films deposited below 230°C are amorphous or metallic and above 450°C semiconductor.
