抄録
A cryostat available to prepare thin films onto the substrate cooled at liquid nitrogen temperature is devised. The cryostat consists of a copper substrate holder having a cavity to be filled with liquid nitrogen and a cylindrical column trap having five stage apertures. The substrate temperature can be set in the range between 100-573K by controlling either the flow rate of liquid nitrogen or the electric current of an inner heater. The thickness of deposited film is monitored by a quartz oscillator. Temperature dependence of resonance frequency of the crystal monitor is observed. Electron micrographs of 100 Å thick Ge and Cr films deposited at liquid nitrogen temperature show uniform amorphous structure.
