抄録
It has been confirmed that thin Si walls with the thickness of1000 Å can be fabricated on Si wafers by using an electron-beam lithography and a dry etching process. It has also been observed that superconducting V3Si layers, whose transition onset temperatures Tc.on are strongly correlated with their thicknesses, are formed by the interaction of V with SiOx. And it has been found that a double-layer structure VOx/V3Si/Si, or a triple-layer structure VOx/V3Si/SiOx/Si or VOxV3Si/V3Si1+α/Si can be obtained by annealing evaporated V films on thinly oxidized Si wafers between650 and 1000°C. Based on the obtained results the possibility of the fabrication of planar S-SC-S-type Josephson junctions having V3Si electrodes embedded in Si single crystal wafers has been discussed.
