高周波イオンプレーティング法によるモリブデン・シリサイド膜の形成
1982 年 25 巻 12 号 p. 795-801
詳細
1982 年 25 巻 12 号 p. 795-801
Thin films of molybdenum silicide were deposited on oxidized silicon wafers by RF ion plating. Molybdenum and silicon were supplied by electron beam evaporation and SiH4 gas, respectively. Argon gas was used for the stabilization of glow discharge. The Si/Mo atomic ratio in the film was changed from 1.4 to 2 by controlling the Mo evaporation rate. The effects of deposition condition, substrate potential, on film properties were investigated by X-ray diffraction analysis, sheet resistance and stress measurements. It was found that the films deposited at -2kV substrate potential are polycrystalline partly before annealing and change to be polycrystalline wholly after annealing for 5 min at 1000°C. The annealed films show good adhesion to oxidized silicon, low resistivity, and low film stress.
