イオン注入シリコンの高温短時間熱アニーリング
1982 年 25 巻 12 号 p. 788-794
詳細
1982 年 25 巻 12 号 p. 788-794
Arsenic and phosphorus-implanted silicon substrates have been annealed by a furnace with higher temperature and shorter time than those of the conventional furnace annealing. Carrier concentrations obtained by differential van der Pauw measurements lie on the as-implanted distribution, showing a complete electrical activation with negligible redistribution of dopants. The experimental values of Hall mobility coincide with those of Irvin mobility, suggesting the regrowth of ion-implanted silicon. Diffusion profiles of dopants after the regrowth of ion-implanted silicon can be modelled by separating the regrowth and diffusion processes with an effective diffusion time.
