CF₄を用いた反応性スパッタリング法で作成したa-Si_xC_yF_z薄膜の性質

抄録

The proprties of amorphous Si_xC_yF_z alloy thin films are studied, which are prepared by reactive rf sputtering of silicon in CF₄ generally used in plasma etching processes, and by co-sputtering of silicon and carbon in CF₄.
As a function of the sputtering partial pressure of CF₄, and the fractional area of carbon for co-sputtering, optical absorption coefficient, IR transmission spectra and the composition of the films are measured.
The vibrating mode of chemical bond of CF₂ and C₂F₆ are dominant for relatively lower value of CF₄ gas pressure. SiC stretching mode becomes predominantly for higher value of CF₄ gas pressure and with increasing the fractional area of carbon for co-sputtering.
The optical gap and the content of carbon and fluorine are increased with increasing CF₄ gas pressure. The composition of the films can be controlled using co-sputtering and changing CF₄ gas pressure.