Making use of a liquid metal gallium ion source, a scanning ion microscope (SIM) has been developed which produces ion-induced secondary electron images. The gallium ion source was very stable in operation at 30 kV and its mass spectrum and energy distributions were measured. A probe diameter of the gallium ion beam was verified to be less than 0.1 μm by SEM images of a evaporated Cr film which was line-etched in the SIM. The ion-induced secondary electron images were compared with SEM images. The former more strongly reflect surface structure of specimens.