A scanning electron microscope has been modified for an electron beam annealing system by removing the spray apertures and the objective lens, and by adding the high power supply, the sawtooth deflecting signal scanning generators, and the static blanking plate. Recrystallization of fine-grained polycrystalline silicon films on insulating layers has been studied with the annealing system. Large-grained polycrystalline silicon films are obtained after electron beam annealing. A typical size of them is 10 μm in width and several mm in length. Annealing of arsenic ion implanted silicon layer is also investigated. High density extrinsic type dislocation loops are observed, whose density and size depend on implantation dose and annealing repetition.

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Making use of a liquid metal gallium ion source, a scanning ion microscope (SIM) has been developed which produces ion-induced secondary electron images. The gallium ion source was very stable in operation at 30 kV and its mass spectrum and energy distributions were measured. A probe diameter of the gallium ion beam was verified to be less than 0.1 μm by SEM images of a evaporated Cr film which was line-etched in the SIM. The ion-induced secondary electron images were compared with SEM images. The former more strongly reflect surface structure of specimens.

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Properties and fabrication technical data on glow discharge produced hydrogenated amorphous silicon carbide have been described. A series of experimantal studies of the tffects of impurity doping on the amorphous silicon carbide has also been carried out. It has been shown from the experiment that a hydrogenated amorphous silicon carbide prepared by the plasma decomposition of [SiH_4(i-x) +CH_4(x)] gas mixture has a good valency electron controllability. Employing the property of the valency controlled a-SiC: H as a wide gap window junction, a-SiC: H/a-Si: H heterojunction solar cells have been fabricated. As a result, we have succeeded to break through an 8% efficiency barrier with this new material. A typical performance of a-SiC: H/a-Si: H heterojunction cell is J_sc of 15.21 mA/cm², V_oc of 0.88 volts, FF of 60.1% and η of 8.04%.

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Thin GaAs layers are prepared on (0001) sapphire, fused quartz or polycrystalline alumina by an ion beam deposition technique. GaAs preferably orientated to [111] grows on (0001) sapphire and fused quartz. The polycrystalline alumina has polycrystalline GaAs regardless of GaAs growth condition. Preferability of (111) GaAs on the (0001) sapphire and the fused quartz depends on substrate temperatures, ion energy or the ratio of As and Ga ion current. These GaAs layers are high resistivity n-type.

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Alloy surfaces of Cu-Sn(100) are prepared by depositing tin onto copper (100) surface and subsequent heat treatments. The surface structure of them is investigated by LEED. After depositing of tin, c(2×2), (3√2×√2) R45° and c(3×2) + (2×2) structures have been obtained as the heat treatments proceed. These are characteristic structures which are not expected from the atomic arrangement of the sections of the bulk crystals of equilibrium phase.
A 1.1 at%Sn-Cu bulk crystal is grown by the Bridgman method. The (100) surface structure of the alloy crystal at equilibrium state is investigated by LEED. Excellent LEED patterns of the (3√2×√2) R45 ° structure are observed on the surface.
Structure models corresponding to the LEED patterns are given.

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