Co-sputter法によるAl及びB添加a-SiC:H薄膜の電気的特性

抄録

Groups III impurity (aluminum or boron) has been introduced into a-SiC:H by the cosputtering method. The dependence of the optical, electrical and opto-electronic properties on the imurity content has been investigated.
In the range of the aluminum content z up to about 10^-2, the photoconductive nature is maintained and the activation energy of dark conductivity changes, without a significant change in the optical band gap. This suggests the doping effect which is confirmed by the thermoelectric power measurements where the type of conduction changes from n to p with increasing z.
From similar results for boron doped films, the doping efficiency is found to be higher for boron than for aluminium.