Abstract
ECR plasma CVD was studied as a means of preparing SiC film for X-ray masks. Amorphous films with good flatness and low H2 content are deposited at substrate temperatures below 800°C at practical deposition rates. The internal stress strongly depends on gas pressure and can be controlled independent of the optical transparency. The temperature dependences of the rate, the stress and the I-R spectrum indicate that the deposition mechanism changes drastically at near 400°C. The SiC film produced by ECR plasma CVD is confirmed to have excellent properties as an X-ray mask membrane.
