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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 35, Issue 12
Displaying 1-6 of 6 articles from this issue
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  • Production of Molecular Sieving Carbon and Its Applications
    Hiroshi KITAGAWA
    1992 Volume 35 Issue 12 Pages 965-971
    Published: December 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.965
    JOURNAL FREE ACCESS
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  • Ion Orbit Analysis for Quadrupole Mass Spectrometer (I)
    Seiji HIROKI, Tetsuya ABE, Yoshio MURAKAMI
    1992 Volume 35 Issue 12 Pages 972-980
    Published: December 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.972
    JOURNAL FREE ACCESS
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    Ion orbits in the quadrupole field were analyzed for four stability zones near the original point in the Mathieu diagram displayed by the (q, a) plane. The coefficients of the Fourier series indicating the ion orbits were calulated and the angular frequency spectra of the orbits were obtained for respective zones. The approximate formulae of the orbits were also obtained at the conditions near the tip in each zone. The harmonic components in the obtained spectra increase with increasing q and a values.
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  • An X-ray Mask using SiC Films Deposited by ECR Plasma CVD
    Takashi OHKUBO, Masatoshi ODA, Hideo YOSHIHARA
    1992 Volume 35 Issue 12 Pages 981-987
    Published: December 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.981
    JOURNAL FREE ACCESS
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    ECR plasma CVD was studied as a means of preparing SiC film for X-ray masks. Amorphous films with good flatness and low H2 content are deposited at substrate temperatures below 800°C at practical deposition rates. The internal stress strongly depends on gas pressure and can be controlled independent of the optical transparency. The temperature dependences of the rate, the stress and the I-R spectrum indicate that the deposition mechanism changes drastically at near 400°C. The SiC film produced by ECR plasma CVD is confirmed to have excellent properties as an X-ray mask membrane.
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  • Application of Flash Desorption for Pressure Measurement in Extremely High Vacuum
    Satoshi FUJIMOTO, Yuko HIROHATA, Tomoaki HINO, Tohiro YAMASHINA, Toshi ...
    1992 Volume 35 Issue 12 Pages 988-994
    Published: December 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.988
    JOURNAL FREE ACCESS
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    The Flash desorption (FD) technique was applied to measure the pressure in the range of extremely high vacuum (XHV). After the adsorption of hydrogen gas on a clean tungsten filament, in the XHV chamber made of aluminum alloy, the pressure rise during the flash heating for the filament was measured by an ionization gauge of the extractor type (EG). The peak value of the pressure rise, ΔP, was observed to be linearly proportional to the exposure of hydrogen gas at less than 0.15 L in the pressure range from 5 × 10-10 to 2 × 10-8 Pa. The pressure of the chamber was expressed as a function of the ratio between ΔP and exposure time, tad. For a lower pressure range, the same technique was applied based on the adsorption of the residual gas in the chamber. The pressure rise was again observed to be approximately proportional to the pressure of the chamber, even in the range of 10-10 Pa. Since the linearity between ΔP/ tad and the chamber pressure may be extrapolated to the lower pressure range of 10-11 Pa, the present FDS technique can be applied for the pressure measurement in the range of 10-11 Pa.
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  • Sulfur/Chlorine Adsorption on the Cu (111) Surface
    Kumi MOTAI, Tomihiro HASHIZUME, Toshio SAKURAI
    1992 Volume 35 Issue 12 Pages 995-1000
    Published: December 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.995
    JOURNAL FREE ACCESS
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    The surface reconstructions of the Cu (111) 1 × 1 surface induced by sulfur and chlorine adsorption have been studied by using the field ion-scanning tunneling microscope. Atomically resolved high-quality STM images were obtained for various phases as a function of coverage, and their structural analysis was carried out. The STM images of the S-related complex phase and the Cu (111) -4√7 × 4√7 R19.1°-Cl phase appeared to be much different from the proposed structures based on earlier LEED studies. Based on our STM data, we proposed a new structural model. The STM results of the Cu (111) -√7 × √7 R19.1°-S phase appeared to be consistent with the structural model derived from the SEXAFS method, and indicates the possibility of formation of the surface compound. The differences between the sulfur and chlorine adsorption systems are discussed.
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  • Drift Velocity of Gadolinium Plasma Generated in the Vicinity of Electron Beam Evaporation Source
    Hironori OHBA, Koichi OGURA, Takemasa SHIBATA
    1992 Volume 35 Issue 12 Pages 1001-1004
    Published: December 20, 1992
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.35.1001
    JOURNAL FREE ACCESS
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