Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Atomically Flat SiO2/Si (001) Interface Formation by UHV Annealing
Masaaki NIWA
Author information
JOURNAL FREE ACCESS

1994 Volume 37 Issue 11 Pages 903-908

Details
Abstract
Conventional wet cleaning and ultrahigh-vacuum (UHV) -annealed cleaning prior to thermal oxidation were compared with their effects on SiO2/Si (001) interface roughness. In comparison with the wet cleaned surfaces, atomically flat interfaces were obtained and the roughness was reduced to less than 0.1 nm in RMS for the UHV-annealed surfaces by annealing the surface at 1100°C in UHV (<5×10-10 Torr). This planarizatin was remarkable in the ultrathin oxide region (<4 nm).
Content from these authors
© The Vacuum Society of Japan
Previous article Next article
feedback
Top