1994 Volume 37 Issue 11 Pages 909-916
This paper reports characteristics of two different types of InAs-related heterosystems, InAs/Al (Ga) Sb and InAs/ AlinAs, grown by molecular-beam epitaxy. In the InAs/Al (Ga) Sb system, an interface bond of either InSb or Al (Ga) As was selectively made by controlling the beam supply sequence during growth. The InAs/AlInAs system was grown on a compositionally graded buffer layer of InGaAs to accommodate the lattice mismatch between the InP substrate and the AlinAs barrier layer. Their optical and electrical properties are discussed from the viewpoint of the interface control. Recent device applications of the InAs /Al (Ga) Sb are also briefly described.
