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Volume 37, Issue 11
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Tatsuru SHIRAFUJI, Kunihide TACHIBANA1994 Volume 37 Issue 11 Pages 875-880
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
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Satoru KISHIDA, Yusuke GOTO, Heizo TOKUTAKA, Kikuo FUJIMURA, Naohiko I ...1994 Volume 37 Issue 11 Pages 881-888
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
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Masaaki HIRAI, Satoshi KAWAMOTO, Hiroki SAITOH, Masahiko KUSAKA, Motoh ...1994 Volume 37 Issue 11 Pages 889-895
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
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Yoshitomo KAMIURA, Wen Biao YING, Masafumi NISHIMATSU, Yong Bing YU, Y ...1994 Volume 37 Issue 11 Pages 896-902
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSHeavily phosphorus-doped silicon wafers were prepared by the Shiraki method as a chemical treatment. The thermally stimulated desorption (TSD) from these samples with thin oxide films was studied by using Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), and mass spectroscopy. The chemical states of the etched surfaces were measured by X-ray photoelectron spectroscopy (XPS). It was found that the thin oxide film on the doped polycrystalline Si surface was desorbed easily at relatively low temperature (560°C), similarly to a single-crystal one. The desorption of the oxide is due to the chemical state from the interface to the near-surface region which includes not only SiO2 but also SiOx. For a single-crystal silicon, a large quantity of phosphorus segregated to the near-surface region even after the oxide had desorbed. It is considered that this phosphorus segregation is attributable to the existence of the strain which is not relaxed because of the low annealing temperature even after desorption of the oxide.View full abstractDownload PDF (797K) -
Masaaki NIWA1994 Volume 37 Issue 11 Pages 903-908
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSConventional wet cleaning and ultrahigh-vacuum (UHV) -annealed cleaning prior to thermal oxidation were compared with their effects on SiO2/Si (001) interface roughness. In comparison with the wet cleaned surfaces, atomically flat interfaces were obtained and the roughness was reduced to less than 0.1 nm in RMS for the UHV-annealed surfaces by annealing the surface at 1100°C in UHV (<5×10-10 Torr). This planarizatin was remarkable in the ultrathin oxide region (<4 nm).View full abstractDownload PDF (1765K) -
Masataka INOUE, Mitsuaki YANO, Yoshio IWAI, Takashige UTATSU, Masaki M ...1994 Volume 37 Issue 11 Pages 909-916
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThis paper reports characteristics of two different types of InAs-related heterosystems, InAs/Al (Ga) Sb and InAs/ AlinAs, grown by molecular-beam epitaxy. In the InAs/Al (Ga) Sb system, an interface bond of either InSb or Al (Ga) As was selectively made by controlling the beam supply sequence during growth. The InAs/AlInAs system was grown on a compositionally graded buffer layer of InGaAs to accommodate the lattice mismatch between the InP substrate and the AlinAs barrier layer. Their optical and electrical properties are discussed from the viewpoint of the interface control. Recent device applications of the InAs /Al (Ga) Sb are also briefly described.View full abstractDownload PDF (1274K) -
Akihiko ISHIBASHI, Masaya MANNOH, Kiyoshi OHNAKA1994 Volume 37 Issue 11 Pages 917-922
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSWe have investigated the annealing effects on the activation of Zn acceptors in the MOVPE-grown p-AlGaInP layer. Postepitaxial annealing was carried out in ambients containing hydrogen, arsine, and phoshine gas in the temperature range of 300-750°C. The activation of Zn acceptors strongly depended on the cooling conditions after the annealing and the thickness of the cap layer on the p-AlGaInP layer. These phenomena are associated with the atomic hydrogen which is released from the hydride by decomposition and diffuses into the p-AlGaInP layer to form the P-H bonds next to Zn in the temperature range of 400-500°C during the cooling step after the postepitaxial annealing.View full abstractDownload PDF (818K) -
Gikan H. TAKAOKA, Masahiro ISHIDA, Nobumitsu HIRAI, Isao YAMADA1994 Volume 37 Issue 11 Pages 923-928
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSWe have grown epitaxial Al/Al2O3 multilayer structure on Si (111) substrates by the ionized cluster beam (ICB) method. The crystallinity and electrical properties were investigated for the multilayer structure. In situ observation of RHEED patterns for Al and Al2O3 layers of the multilayer structure showed that epitaxial growth of Al on Al2O3 and of Al2O3 on Al was achieved, and the interface between Al and Al2O3 layers was flat. In addition, the experimental and theoretical results on the electrical properties showed that a tunneling current was observed and the breakdown field was 5×107 V/cm, when the Al2O3 thickness was a few monolayers.View full abstractDownload PDF (1026K) -
Akira NAKAYAMA, Makoto SETOYAMA, Takashi YOSHIOKA1994 Volume 37 Issue 11 Pages 929-934
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSPolycrystalline TiN/AlN superlattice coatings were deposited on silicon and cemented carbide substrates using an arc ion plating system. The superlattice period was determined by the substrate holder rotation speed and the arc current. Evaluation methods including X-ray diffraction, energy-dispersive spectroscopy and transmission electron microscopy were used to characterize the microstructure of the superlattice coatings. Microhardness and high-temperature oxidation tests for the superlattice TiN/AlN films were also evaluated. The results obtained are as follows : The microhardness of TiN/AlN superlattice films was found to be about Hk4000. TiN/AlN superlattice films start to oxidize at a temperature level of 1203 K in hot air.View full abstractDownload PDF (1092K) -
Hiroki SHIMANO, Takashi HIFUMI, Kenji ITOGA, Yoshihiko OZAKI1994 Volume 37 Issue 11 Pages 935-940
Published: November 20, 1994
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSA high power X-ray delivery system consisting of a superconducting compact storage ring and a novel beamline is now in use for SR (synchrotron radiation) lithography research at Mitsubishi Electric. The double ellipsoidal focusing mirror optics of the beamline collects and condenses the horizontally diverging SR beam and transports it to the exposure station, a Karl Suss X-ray stepper. The beamline is kept at an ultrahigh vaccum level by the vacuum control system. Furthermore, the vacuum protection of the beamline ensures that a storage ring vacuum of at least 1.33×10-6 Pa is maintained, even when the beamline vacuum is broken down. We have also investigated the effects of the electron beam orbit change on the vacuum performance of the beamline.View full abstractDownload PDF (1015K)
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