真空
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
二源成膜装置によるNi-C複合膜の作製とその場分析
史 蹟橋場 裕治芳賀 由美子入戸野 修
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1997 年 40 巻 4 号 p. 365-371

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Ni-C composite films were prepared by codeposition using a combined technique of plasma CVD and ion beam sput-tering deposition. The structure of these films was characterized by in-situ energy-dispersive X-ray diffraction (EDXRD), transmission electron microscopy (TEM) and Raman spectroscopy. It was found that a nickel carbide phase, Ni3C (hcp), formed as very fine crystallites over a wide temperature range when Ni-C films were deposited at low HC4 flow rates. The thermal stability of this nonequilibrium carbide Ni3C was also studied. As a result, the Ni3C carbide was found to decompose into nickel and graphite at around 400°C. With high HC4 flow rates (> 0.2 sccm), the structure of the Ni-C films became amorphous. The formation behavior of the carbide and amorphous Ni-C phases are discussed in relation to the electrical resistivity of the films.

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