抄録
The magnetoresistive Co-Ag thin films were deposited on glass substrates in a magnetic field at room temperature by an rf magnetron sputtering system. The magnetoresistive properties of the as-deposited samples was investigated in relation to the intensity of the bias magnetic field applied parallel or perpendicular to the film surface during deposition. Samples deposited in a bias magnetic field showed larger responses in magnetoresistance than that of samples prepared by the conventional sputtering. The magnetoresistive response of the samples deposited in a bias magnetic field increased with increasing intensity of the magnetic field, whereas no saturation of the trend was observed in the range of 9 mT for parallel and 150 mT for perpendicular configurations.
