X線光電子分光法の深さ方向分析におけるAu/Cr/SiO2界面での帯電現象の研究
2003 年 46 巻 6 号 p. 491-496
詳細
2003 年 46 巻 6 号 p. 491-496
Charging in depth profiling in X-ray photoelectron spectroscopy (XPS) for metal layers on insulated substrates (Au/Cr/SiO2 (Quartz)) was studied. In the depth profiling using a neutralizer, differential charging was observed at the Cr/ SiO2 interface by conducting the sample to the analyzer. This charging should be strongly related with the change of the surface morphology from Cr “layer” to “islands” on SiO2 substrate during sputtering. In the insulated case from the analyzer, almost no differential charging was observed at the Cr/SiO2 interface. This is quite helpful for the identification of chemical state at the metal/insulator interface. Thus, it is concluded that the depth profiling in XPS for metal layers on insulated substrates required a uniform surface potential at the metal/insulator interface during sputtering by insulating the sample from analyzer.
