Development of Ion Beam Assisted Deposition System Equipped with a Low Energy Compact Microwave Ion Source

Abstract

New ion beam assisted deposition (IBAD) system equipped with a Low voltage extraction microwave ion source (MWIS) was developed for the purpose of orientation control of thin films. This system has three ports for MWIS to provide ion beam with different incident angles of 45°, 60°, and 75°. Fundamental properties of the ion source was examined, and it was found that sufficient ion current for deposition was obtained at the substrate holder. Tantalum carbide thin films were deposited and relationship between deposition parameter and property of the thin films was measured.