Nanoparticles formed in a thin SiO
2 layer on silicon substrate are expected to use for development of single electron devices. The TEM observation is reliable but takes much effort and a long time for obtaining information about state of nanoparticles, i.e. particle size, distribution depth. New method is desired to obtain the information with ease and a short time like optical transmission analysis. Here, optical reflection property from multiple layer structure on Si was studied. We proposed a calculation method of the reflectance from Ag implanted 50-nm-thick SiO
2 film on Si substrate with three-layers model of the top SiO
2, a composite layer with Ag nanoparticles, and bottom SiO
2 layer. The experimentally obtained reflectance spectra from samples at 30 keV-1 × 10
16 ions/cm
2 are well fitted by the proposed analysis as changing particle size and distribution depth based on the depth profiles of implanted atoms.
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