2008 Volume 51 Issue 1 Pages 37-43
Transition metal oxide films show a rich variety of peculiar properties, such as ferroelectricity, ferromagnetism, high Tc superconductivity, colossal magnetoresistance, and so on. The method to process the oxide films down to nano scale is still under development. In this paper we introduce several techniques to process oxide films on the basis of AFM lithography and nanoimprint lithography. Using AFM based lithography, nanostructures of several tens nanometers have been realized. By Mo lift-off technique with nanoimprint lithography, we have obtained a large area dot array whose dot size is ~120 nm. These methods will lead to various room temperature functional oxide devices operated by light, electric field, magnetic field, and so on.
