速報
高周波マグネトロンスパッタリング法における Pb(Zr,Ti)O3 膜のターゲット依存性
2008 年 51 巻 3 号 p. 118-120
詳細
2008 年 51 巻 3 号 p. 118-120
We deposited Pb(Zr,Ti)O3 (PZT) films on MgO(100) substrates at 440°C with sinter or powder target and investigated the effects of films of targets on the PZT film growth. The PZT films with (101)-orientation where they hardly included impurity phases were deposited by the use of the sinter target. The composition of the film was approximately a stoichiometry, and the growth rate deposited with the sinter targets was higher than that with the powder targets.
