速報
反射電子顕微鏡法とミクロ 4 端子プローブによる表面・電気伝導その場計測
2008 年 51 巻 3 号 p. 149-151
詳細
2008 年 51 巻 3 号 p. 149-151
We have developed a surface conductivity measurement system for a UHV electron microscope (UHV-EM). The sample surfaces were prepared in the UHV-EM and their structures were observed in situ by reflection electron microscopy and diffraction (REM-RHEED). After the sample preparation, the samples were cooled down to RT and the conductance measurement was carried out. The Si(111)-7×7 and Si(111)-√3×√3-Ag structures were used as sample surfaces which were prepared on the Si(111) vicinal surface inclined toward the [112] direction by 1°. The resistance of the 7×7 structure is much larger than that of the √3×√3-Ag structure and this is consistent with the previous report. This indicates that we can measure the surface conductivity by using our system.
