Organic Field-Effect Transistors Based on Vapor-Deposited Pentacene and Soluble Pentacene Precursor

Abstract

  We report the characterization and comparison of organic field-effect transistors (OFETs) based on vapor-deposited pentacene and a soluble pentacene precursor 13,6-N-Sulfinylacetamidopentacene in solution. The gate insulator, poly (4-vinylphenol) (PVP), was crosslinked by heat or UV irradiation. Spin-coated pentacene precursor film changed to pentacene film after heating in vacuum or nitrogen; and the film structure was characterized by the UV-visible absorption spectra and X-ray diffraction (XRD). Results show that the film structure of heated pentacene precursor is similar to that of the vapor-deposited pentacene but not exactly the same. Soluble pentacene precursor shows easier processability for fabrication of high-performance solution-processable OFETs. The determined carrier mobility for vapor-deposited pentacene film is in the order of 10^-1 cm²/Vs, and for soluble pentacene precursor is in the order of 10^-2 cm²/Vs.