Work Function Controlled Transparent Conductive Films with Zinc Oxide System by Pulsed Laser Deposition Method

Abstract

  Approximately 200-nm-thick transparent conducting GZO films (ZnO doped with 5 wt.% Ga₂O₃) have been deposited on glass substrates at room temperature using a pulsed laser deposition (PLD) using Nd:YAG laser (λ=1064 nm). It was recognized that the work function of the GZO films increased from 4.6 eV for the as-deposited state to 5.1 eV for the annealed state at 400°C.