Fabrication of Al-doped Transparent Conducting ZnO Film on COP Substrates by PLD Method

Abstract

  Approximately 230 nm-thick Al-doped transparent conducting zinc oxide films (AZO) have been deposited on Cyclo Olefin Polymer (COP) substrates with ZnO buffer layer fabricated under oxygen partial pressure of 0.5~5.3 Pa, by pulsed laser deposition (PLD) using ArF excimer laser (λ=193 nm). When the ZnO buffer layer was fabricated with oxygen partial pressure of 5.3 Pa, the lowest resistivity obtained for the AZO film was 4.12×10^-4 Ω•cm.