抄録
After depositing an ultra-thin metallic Ti film by sputtering, we repeated the process of exposing the still active plasma gas for high-rate low-temperature deposition of a metal compound film, thereby successfully fabricating a thin film of TiO2 with photocatalytic properties. The TiO2 thin film produced using the present method exhibited approximately 15 times the deposition rate of DC reactive magnetron sputtering, yielding a crystalline structure using an unheated substrate (approximately 40°C).
