抄録
The effects of high nitrogen (N2) pressure and thermal treatment on the adhesion between a silicon film and a polyethersulfone (PES) substrate during crystallization by excimer laser annealing (ELA) were investigated using silicon nitride (SiNx) as the barrier film for the fabrication of polycrystalline silicon (poly-Si) thin-film transistors on a plastic substrate. As the thickness of the SiNx film increased from 50 to 150 nm at a gas pressure of 0.2 MPa, film exfoliation was suppressed. A poly-Si film with a crystalline fraction of 76% was obtained at an energy density of 200 mJ/cm2 and a high pressure in N2 atmosphere. In addition, thermal treatment before ELA was useful for improving the adhesion between the inorganic film and the PES substrate.
