Si 結晶における水素の侵入過程と状態

抄録

  We review recent works on 1) an isotope effect of penetration of Hydrogen(H) and Deuterium(D) into Silicon through Si/SiO₂ interface and 2) H effects for Si nanostructures, as well as summary of hydrogen states in crystal Si. In particular, a new filtering effect of H and D isotope atoms was found for penetration process into crystal silicon (Si) through the interface between a Si and SiO₂ native oxide layer. More H atoms are introduced into Si than D for mixing gases. This phenomenon can be tentatively explained in terms of an isotope filtering model of H and D via an intermediate cluster state formed at the interface between the native SiO₂ layer and crystal Si. Hydrogen passivation of interface defects is shown to be needed for knowing proper impurity doping effects, and electronic, optical, and magnetic properties in Si nanostructures.