Abstract
By using four-wave-mixing technique, we demonstrated the possibility of the real space mapping of exciton-exciton interaction and strain in GaN films grown on various substrates. The image obtained from the evaluation of the quantum beats indicates that these reductions correspond to the phase changes between two exciton transitions, reflecting the spatial properties of exciton-exciton interactions. The line-localization suggests a contribution of line-defect to the anomalous interactions.
