遷移金属酸化物抵抗変化メモリ（ReRAM）におけるフィラメント分布と動作特性の関係

抄録

  Large variation in basic memory properties is a serious issue that hinders the practical use of ReRAMs. This study revealed that one of the main factors causing variation is the presence of multiple filaments in each memory cell. An operating filament switches to another filament having the smallest set voltage (V_set) at each instance of switching. We propose a resistive switching model that takes the presence of multiple filaments into consideration. A Monte Carlo simulation based on the resistive switching model reproduces the V_set distribution. The dependence of 〈V_set〉 on the number of switching cycles was predicted by the model and confirmed experimentally.