Abstract
A pure bulk-phase pentacene film is an attractive material because of its high mobility. We prepared bulk-phase pentacene films by increasing the thermal energy of pentacene molecules. In this method, a heated tungsten (W) mesh was set between a pentacene source and a substrate in a vacuum chamber. The thermal energy of pentacene molecules was increased by contact with the heated W mesh in H2 atmosphere before reaching the substrate. As the mesh temperature increased from room temperature to 1200℃, the intensity ratio of the bulk phase to the thin-film phase increased from 0 to 9.7. Moreover, we determined the structural properties and growth mechanism related to the thermal energy of pentacene molecules on the growth surface, and the effects of atomic hydrogen.
