抄録
Atom probe tomography (APT) is a powerful characterization method to obtain three-dimensional (3D) distributions of atoms in materials at nearly atomic-scale resolution by detecting atoms one by one, which are field-evaporated from the apex of needle-shaped specimen. Recent laser-assisted APT system allows analysis of not only metals (conductive materials) but also semiconducting and insulating materials. Advanced sample preparation using focused ion beam apparatus equipped with high resolution scanning electron microscope contributes to site-specific analysis in semiconductor-based nanodevice structures. Such an innovative methodology to visualize elements in 3D has enabled application of APT in the broad area of materials science and engineering. In this article, we focus on recent studies using APT; dopant distribution analysis in modern metal-oxide-semiconductor and fin-type field-effect transistors, ion-implanted deuterium analysis in silicon, and intrinsic spatial resolution evaluation of APT using silicon isotopic multilayers.
