抄録
We have produced stable organic field-effect transistors (OFETs) with an ultra-thin high-k gate insulator deposited directly on top of organic semiconductor by atomic layer deposition (ALD). We show that it is possible to fabricate devices with negligibly small threshold voltage and very low gate-bias-stress instability without sacrificing carrier mobility. These results indicate that the interface between organic semiconductor and gate insulator made by ALD is suitable to realize high-quality OFETs, operating at small gate voltage. In addition, the dielectric layer acts as a perfect passivation layer protecting organic semiconductors from degradation.
