解説
有機半導体の pn 制御と有機薄膜太陽電池
2015 年 58 巻 3 号 p. 91-96
詳細
2015 年 58 巻 3 号 p. 91-96
pn-control techniques by impurity doping both for single and co-deposited films consisting of two kinds of organic semiconductors were established. Ionization rate of dopants in organic semiconductor films was revealed to be less than 10%. A series of fundamental junctions such as Schottky junctions, pn-homojunctions, p+, n+/metal ohmic junctions, n+p+-ohmic homojunctions, and tandem cells were successfully fabricated in the co-deposited organic semiconductor films by impurity doping only.
