スパッタ法におけるイオン照射効果制御を用いた薄膜形成技術の開発

抄録

　We fabricated Ni films on a Polyimide (PI) film and an Acrylonitrile-Butadiene-Styrene (ABS) resin substrate using unbalanced magnetron sputtering assisted by inductively coupled plasma. For the PI film, the effect of ion irradiation was controlled by substrate DC bias V_S and magnetic flux density toward the substrate B_C. For the ABS resin substrate, the effect of ion irradiation was controlled by target DC power P_T and magnetic flux density toward the substrate B_C. For each substrate, we investigated the effect of ion irradiation on the Ni film structures in detail. The effect of ion irradiation E was estimated by measured physical quantities with respect to sputtered atom flux, ion flux and ion energy. From x-ray diffraction measurement, the crystallite size t₍₁₁₁₎ increased with the effect of ion irradiation. Minimum film resistivities of 9.0×10⁻⁶ and 1.4×10⁻⁵ Ωcm were measured for B_C=3 mT and E=0.24 on the PI film and B_C=5 mT and E=0.98 on the ABS resin substrate, respectively. We conclude that controlling the effect of ion irradiation is effective for high quality Ni film formation on the PI film and the ABS resin substrate.