Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
解説
ミニマルファブのための小型HiPIMS型スパッタ成膜装置の開発
小木曽 久人行村 建中野 禅田中 宏幸クンプアン ソマワン薮田 勇気亀井 龍一郎原 史朗
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ジャーナル フリー

2017 年 60 巻 9 号 p. 365-371

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抄録
 Minimal fab is a new manufacturing system to suitably fabricate small numbers of semiconductor devices with very low investment. Minimal fab handles a half-inch wafer, and requires that the process equipment is installed in a small regulated chassis. For the minimal fab, sputter deposition equipment was developed. High power impulse magnetron sputtering (HiPIMS) technology was used for the deposition. The HiPIMS equipment for minimal fab successfully deposit conductive Al films for MOSFET devices. The equipment hardly generated particles that contaminated the fabricated devices. The electrical resistivity of deposited film was 45 nΩm. This resistivity was small enough to work the devices.
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