Investigation of Deterioration of Pt Nanogap Memory Device and Influence of Electrode Under High Temperature Environment

Abstract

It was reported that studies that the resistive switching effect of Platinum electrodes retains under ultra high temperature condition at 873 K. In this study, we investigate the retention of nanogap-resistance-states in ultra high temperature region above 873 K and clarify the mechanism that inhibits the resistance switch effect in the ultra high temperature region.