Study of the effect of methane concentration and substrate misorientation on the homoepitaxial growth on (111) diamond

Abstract

Diamond is expected as a potential material for high-power and high-frequency devices in the next generation. In this study, we investigated the effects of substrate misorientation and methane concentration on the homoepitaxial (111) diamond growth by microwave-plasma chemical vapor deposition method. It was founded that surface roughness and crystal quality of the diamond films were improved by the homoepitaxial growth with a methane concentration of 0.5% on the substrate with a misorientaion tilted along the <112^-> direction.