Characterization of nonradiative defects in boron-doped diamond films using transient photocapacitance spectroscopy

Abstract

Diamond is expected as a potential material for high-power and high-frequency devices in the next generation. In this study, we have fabricated an evaluation system for nonradiative defects by means of transient photocapacitance spectroscopy, and characterized the boron-doped diamond films grown by microwave-plasma chemical vapor deposition method. We found an acceptor-type defect around 1.2 eV above the valence-band edge. The defect density of the defect was 2.78×10¹⁶ cm^-3.