RF-MBEによるGaInN薄膜の成長温度特性

Abstract

The GaInN films have typically been grown on GaN templates. Crystal defects are generated due to lattice mismatch between GaInN and GaN, though high-quality crystal of GaInN is necessary to devices. In this study, GaInN films were grown on GaN templates at different growth temperatures by RF-MBE. The films were investigated by the XRD-RSM measurements.