Fabrication of nanoscale three-terminal structure device using electromigration during metal deposition

Abstract

New transistors that control the tunneling current between nanogap electrodes by the gateelectric field are intensely investigated. We propose a fabrication method to form a structurein which each of the three terminal electrodes approaches at the nanoscale. The nanogap structures of about 1 nm were formed in a self-assembly by applying a bias voltage during vacuum deposition and confirmed the tunnel current between the three terminal electrodes.