Mass production technology of PbZrTiO₃ by sputtering method for piezoelectric MEMS devices

Abstract

Recently, the integration of CMOS and the Piezo-MEMS device is demanded to realize device size reduction and multi-functionality simultaneously. In order to fabricate CMOS-Integrated Piezo-MEMS devices, the low temperature crystallization technique of PZT film is required (< 500°C) because of the limitation of thermal budget for MEMS processing. We have succeeded to establish the low temperature crystallization technique of PZT film at 485°C. We will present electrical/piezoelectrical properties and mass production technology of PZT film.